SUPPRESSION OF EPITAXIAL SILICON LAYER DOPING WITH BORON IN THE PRESENCE OF HYDROGEN-CHLORIDE

被引：4

作者：

MORGENSTERN, T ^{[1
]}

KUHNE, H ^{[1
]}

KOKOVIN, GA ^{[1
]}

TESTOVA, NA ^{[1
]}

TITOV, AA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST INORGAN CHEM,NOVOSIBIRSK 630090,USSR

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 01期

关键词：

D O I：

10.1002/crat.2170220119

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：75 / 83

页数：9

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[3]

KOKOVIN GA, 1982, CRYST RES TECHNOL, V17, P1379

[4]

KOKOVIN GA, 1982, CRYST RES TECHNOL, V17, P1217

[5] AUTODOPING OF EPITAXIAL SILICON LAYERS .2. DIFFUSION-INDUCED AUTODOPING [J].

KUHNE, H ;

GAWORZEWSKI, P ;

MALZE, W .

CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (05) :635-644

[6]

KUHNE H, 1985, CRYST RES TECHNOL, V20, P1583

[7]

KULKARNI SB, 1980, FAL M EL SOC AM HOLL

[8] COMPUTER-SIMULATION IN SILICON EPITAXY [J].

REIF, R ;

DUTTON, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) :909-918

[9]

RICHTER F, 1984, HALBLEITEREPITAXIE

[10]

WAGIN WA, 1979, ELEKTRONAJA TECHNI 2, V127, P58

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