AUTODOPING OF EPITAXIAL SILICON LAYERS .2. DIFFUSION-INDUCED AUTODOPING

被引：4

作者：

KUHNE, H

GAWORZEWSKI, P

MALZE, W

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1985年 / 20卷 / 05期

关键词：

D O I：

10.1002/crat.2170200507

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：635 / 644

页数：10

共 10 条

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[7] AUTO-DOPING DURING THE DEPOSITION OF EPITAXIAL SILICON LAYERS FROM THE GAS-PHASE .1. AUTO-DOPING FROM THE GAS-PHASE [J].

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[8] KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].

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[9]

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[10] KINETICS OF LATERAL AUTO-DOPING IN SILICON EPITAXY [J].

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