IMPURITY DISTRIBUTION IN POLYCRYSTALLINE ALUMINUM NITRIDE CERAMICS

被引：24

作者：

CALLAHAN, DL ^{[1
]}

THOMAS, G ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 07期

关键词：

aluminum nitride; distribution; grain boundaries; impurities; transmission electron microscopy;

D O I：

10.1111/j.1151-2916.1990.tb05298.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Convergent‐beam electron diffraction and diffuse darkfield imaging of transmission electron microscopy were used to obtain qualitative information regarding the distribution of impurities in polycrystalline AIN. Impurities are distributed homogeneously within the grains of a given ceramic, but an amorphous grain‐boundary phase on the order of 1 to 2 nm in thickness is observed between the AIN matrix grains. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：2167 / 2170

页数：4