ELECTRONIC-PROPERTIES OF COMPOSITIONALLY DISORDERED QUANTUM WIRES

被引：25

作者：

TAYLOR, JPG ^{[1
]}

HUGILL, KJ ^{[1
]}

VVEDENSKY, DD ^{[1
]}

MACKINNON, A ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.67.2359

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic states in quantum wires are studied using computer simulations of the growth to characterize the compositional disorder and a tight-binding Hamiltonian to determine the electronic densities of states. Calculations for monolayer slices of wires generated from the statistics of the simulated wires reveal the degrading effect of interface profile fluctuations and islands on the ideal quasi-one-dimensional electronic characteristics. Fixed-width fluctuations of the wire profiles, on the other hand, have a relatively minor effect on the first few subbands. Calculations of the localization length are used to characterize the mobility within the quantum wires.

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页码：2359 / 2362

页数：4

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