VAPOR EPITAXIAL-GROWTH AND CHARACTERIZATION OF INAS1-XPX

被引：4

作者：

HALLAIS, J

SCHEMALI, C

FABRE, E

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(72)90245-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：173 / &

共 21 条

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[8] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY [J].

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[9]

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[10]

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