ELECTRON EMISSION FROM SCHOTTKY BARRIER STRUCTURE ZNS-PT-CS

被引：15

作者：

WILLIAMS, R

WRONSKI, CR

机构：

[1] RCA Laboratories, Princeton

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 07期

关键词：

D O I：

10.1063/1.1652584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Emission of electrons into vacuum from a forward-biased Schottky barrier has been demonstrated experimentally. The emitting contact is a thin layer of platinum on n-type conducting ZnS with the outer surface of the platinum cesiated to reduce its work function. Capacitance and photoemission measurements indicate that the ZnS:Pt barrier height is 2.3 eV. Under forward-bias emission is observed. © 1968 The American Institute of Physics.

引用

页码：231 / &

共 12 条

[1]

ARCHER RJ, 1968, AFCRL680122 AIR FORC

[2] ELECTRICAL TRANSPORT AND CONTACT PROPERTIES OF LOW RESISTIVITY N-TYPE ZINC SULFIDE CRYSTALS (HALL EFFECT - BARRIER HEIGHT - WORK FUNCTION - N-TYPE CONDUCTIVITY - E) [J].