FORMATION OF P-N JUNCTIONS IN SEMICONDUCTORS BY THE VARIATION OF CRYSTAL GROWTH PARAMETERS

被引：7

作者：

BRIDGERS, HE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1956年 / 27卷 / 07期

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D O I：

10.1063/1.1722476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：746 / 751

页数：6

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