CEO2 FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

被引：12

作者：

HOLLMANN, EK ^{[1
]}

ZAITSEV, AG ^{[1
]}

LOGINOV, VE ^{[1
]}

LIKHOLETOV, YV ^{[1
]}

机构：

[1] ST PETERSBURG ELECTROTECH UNIV,CTR MICROELECTR TECHNOL,ST PETERSBURG 197376,RUSSIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 03期

关键词：

D O I：

10.1088/0022-3727/26/3/027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The preparation of CeO2 thin films on sapphire by DC reactive magnetron sputtering of metallic Ce target in an argon-oxygen mixed gas is reported. The resputtering of the film deposited facing the target track was observed. The films deposited far from the sputtering system axis exhibited well-oriented crystalline structure and a smooth surface that allows the utilization of these films as a sub-layers for further thin film growth. No substantial diffusion of Al into the CeO2 film was observed.

引用

页码：504 / 505

页数：2

共 5 条

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APPLIED PHYSICS LETTERS, 1991, 58 (19) :2165-2167

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