ANISOTROPY OF DEPOSITION RATE IN MAGNETRON SPUTTERING OF CEO2

被引:12
作者
KAGEYAMA, Y
TAGA, Y
机构
[1] Toyota Central Research & Development Labs. Inc., Nagakute-cho, Aichigun, Aichiken
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577373
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The sputter depositions of Al2O3, CeO2, Ta2O5, Y2O3, and ZnO were performed in view of elucidating their spatial distribution of deposition rate. Among them, CeO2 and Y2O3 showed a depression of deposition rate in front of the target. Similar results were observed for CeO2 with changing the O2 concentration in the sputtering gas and the sputtering discharge power. This depression of the deposition rate in front of the target is restricted to the cases of 5% to 2% of O2 and of higher discharge power. In these cases, the planar distribution of deposits in front of the target have concave profiles corresponding to the erosion region on the target. Main reason for this depression of deposition rate can be explained in terms of reemission of deposits by energetic particles bombardment from the target. However, another chemical effect of O2 may affect the total amount of the deposits.
引用
收藏
页码:604 / 605
页数:2
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