AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS

被引：5

作者：

DAVID, JPR

HOPKINSON, M

PATE, MA

机构：

[1] SERC III-V Semiconductor Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield SI 3JD, Mappin Street

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 11期

关键词：

PIN DIODES; AVALANCHE DIODES;

D O I：

10.1049/el:19940620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The avalanche breakdown behaviour of (AlxGa1-x)0.52In0.48P has been investigated by growing a series of pin diode structures and by measuring the reverse leakage currents until the onset of avalanche breakdown. Comparing the breakdown voltage (V(bd)) with that of GaAs, significant increases are obtained, with AlInP having in excess of twice the V(bd) of GaAs.

引用

页码：907 / 909

页数：3

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