VAPOR GROWTH OF HIGH RESISTIVITY ZNTE

ZnTe, a group II-VI wide bandgap semiconductor, has been considered a potentially useful electroluminescent and electrooptic material for some time. The present study reports on the vapor growth of pure and In-doped ZnTe utilizing a vertical modification of the W. W. Piper and S. J. Polich technique. High resistivity p-type crystals of ZnTe were grown by transporting powdered ZnTe with In added in a closed, evacuated ampoule. Only certain special charge compositions yielded appreciable vapor transport rates. It was possible to grow 740,000 ohm-cm ZnTe, free of Te precipitates, by the addition of 8/10//3 a/o