VAPOR GROWTH OF HIGH RESISTIVITY ZNTE

被引：13

作者：

JORDAN, AS

DERICK, L

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 10期

关键词：

D O I：

10.1149/1.2411547

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

ZnTe, a group II-VI wide bandgap semiconductor, has been considered a potentially useful electroluminescent and electrooptic material for some time. The present study reports on the vapor growth of pure and In-doped ZnTe utilizing a vertical modification of the W. W. Piper and S. J. Polich technique. High resistivity p-type crystals of ZnTe were grown by transporting powdered ZnTe with In added in a closed, evacuated ampoule. Only certain special charge compositions yielded appreciable vapor transport rates. It was possible to grow 740,000 ohm-cm ZnTe, free of Te precipitates, by the addition of 8/10//3 a/o

引用

页码：1424 / &