DIELECTRIC-SPECTROSCOPY OF SILICON BARRIER DEVICES

被引：27

作者：

JONSCHER, AK

ROBINSON, MN

机构：

[1] Univ of London, London, Engl, Univ of London, London, Engl

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

DIELECTRIC SPECTROSCOPY - ELECTROCHEMICAL INTERACTION - LOSS PEAK - SCHOTTKY DIODE - SILICON BARRIER DEVICES - SURFACE BARRIER DIODE;

D O I：

10.1016/0038-1101(88)90427-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1277 / 1288

页数：12

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