ELECTRON-MOBILITY IN HEAVILY DOPED GALLIUM-ARSENIDE DUE TO SCATTERING BY POTENTIAL FLUCTUATIONS

被引：29

作者：

YANCHEV, IY

ARNAUDOV, BG

EVTIMOVA, SK

机构：

[1] Research Laboratory of Semiconductor Physics, University of Sofia

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 19期

关键词：

D O I：

10.1088/0022-3719/12/19/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electron mobility in heavily doped GaAs is calculated by using an approach by Yussouf and Zittartz (1973) to account for the electron scattering in a Gaussian random potential. The cases of random and correlated impurity distribution are considered. Comparison with experimental data gives evidence that correlation is essential for the electron transport. It gives rise to a weak dependence of mobility on the electron concentration, which agrees very well with experiment.

引用

页码：L765 / L769

页数：5

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