PROPERTIES OF FILAMENTS IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTING THRESHOLD SWITCHES

被引：13

作者：

ORMONDROYD, RF ^{[1
]}

ALLISON, J ^{[1
]}

THOMPSON, MJ ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD, ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1974年 / 15卷 / 02期

关键词：

D O I：

10.1016/0022-3093(74)90057-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：310 / 328

页数：19

共 15 条

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ALLISON, J ;

DAWE, VR .

ELECTRONICS LETTERS, 1972, 8 (17) :437-&

[2] PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES [J].

BOSNELL, JR ;

THOMAS, CB .

SOLID-STATE ELECTRONICS, 1972, 15 (11) :1261-&

[3] MECHANISM OF THRESHOLD AND MEMORY SWITCHING IN GLASSY CHALCOGENIDE ALLOY DEVICES [J].

BOSNELL, JR ;

THOMAS, CB .

PHILOSOPHICAL MAGAZINE, 1973, 27 (03) :665-681

[4]

Coward L. A., 1971, Journal of Non-Crystalline Solids, V6, P107, DOI 10.1016/0022-3093(71)90049-4

[5]

DAWE VR, TO BE PUBLISHED

[6]

Fritzsche H., 1970, Journal of Non-Crystalline Solids, V4, P464, DOI 10.1016/0022-3093(70)90082-7

[7]

Henisch H. K., 1970, Journal of Non-Crystalline Solids, V4, P538, DOI 10.1016/0022-3093(70)90091-8

[8] ENERGY-BAND GAP AND DENSITY OF SI-AS-TE AMORPHOUS SEMICONDUCTORS [J].

NUNOSHITA, M ;

ARAI, H .

SOLID STATE COMMUNICATIONS, 1972, 11 (02) :337-+

[9]

OWEN AE, PRIVATE COMMUNICATIO

[10]

ROCKSTAD HK, 1970, J NONCRYST SOLIDS, V2, P224

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