EFFECT OF DEEP TRAPS ON BARRIER HEIGHTS OF METAL-INSULATOR-METAL TUNNEL JUNCTIONS

被引：17

作者：

SIMMONS, JG

机构：

[1] Department of Electrical Engineering, University of Toronto, Toronto 5, Ont.

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 23卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.23.297

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that the potential barrier max in a thin-film metal-insulator-metal system increases rapidly with increasing insulator thickness when electrons are immobilized in deep traps in the insulator, and at low voltage biases dmaxdV is independent of the insulator parameters. This effect may be an explanation of the observations of Lewicki and Mead. © 1969 The American Physical Society.

引用

页码：297 / &