SPIN-DISORDER SCATTERING AND MAGNETORESISTANCE OF MAGNETIC SEMICONDUCTORS

被引：208

作者：

HAAS, C

机构：

[1] Philips Research Laboratories, N. V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

PHYSICAL REVIEW | 1968年 / 168卷 / 02期

关键词：

D O I：

10.1103/PhysRev.168.531

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The consequences of a simple type of exchange interaction between free charge carriers in a broad energy band and localized magnetic moments are discussed. The interaction causes a splitting of the energy bands into bands for the two spin directions. It also leads to spin-disorder scattering of the charge carriers. The temperature dependence of the mobility is calculated for ferromagnetic and antiferromagnetic semiconductors. Expressions are given for the magnetoresistance of ferromagnetic semiconductors. © 1968 The American Physical Society.

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页码：531 / &

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