SPIN-DISORDER SCATTERING AND MAGNETORESISTANCE OF MAGNETIC SEMICONDUCTORS

被引:208
作者
HAAS, C
机构
[1] Philips Research Laboratories, N. V. Philips' Gloeilampenfabrieken, Eindhoven
来源
PHYSICAL REVIEW | 1968年 / 168卷 / 02期
关键词
D O I
10.1103/PhysRev.168.531
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The consequences of a simple type of exchange interaction between free charge carriers in a broad energy band and localized magnetic moments are discussed. The interaction causes a splitting of the energy bands into bands for the two spin directions. It also leads to spin-disorder scattering of the charge carriers. The temperature dependence of the mobility is calculated for ferromagnetic and antiferromagnetic semiconductors. Expressions are given for the magnetoresistance of ferromagnetic semiconductors. © 1968 The American Physical Society.
引用
收藏
页码:531 / &
相关论文
共 32 条
[31]  
Ziman J. M., 1960, ELECT PHONONS
[32]  
Ziman J. M., 1964, PRINCIPLES THEORY SO