MEASUREMENT OF POSITRON MOBILITY IN SI AT 30-300-K

被引：21

作者：

MAKINEN, J

CORBEL, C

HAUTOJARVI, P

MATHIOT, D

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

[2] CENS,INST NATL SCI & TECH NUCL,F-91191 GIF SUR YVETTE,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.43.12114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of positron motion in silicon (Si:[P] = 4 x 10(14) cm-3) is studied experimentally by measuring the drift length of positrons in the space-charge region of an Au-Si surface-barrier diode. At 300 K the positron mobility is 110 +/- 15 cm2 V-1 s-1, and it increases to 2800 +/- 1000 cm2 V-1 s-1 at 30 K. Below 300 K the mobility varies with temperature in accordance with T-3/2. This temperature dependence of carrier mobility is typical of scattering from longitudinal-acoustic phonons.

引用

页码：12114 / 12117

页数：4

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