ELECTRON-ENERGY DISTRIBUTION AT THE INSULATOR-SEMICONDUCTOR INTERFACE IN AC THIN-FILM ELECTROLUMINESCENT DISPLAY DEVICES

被引：9

作者：

AGUILERA, A ^{[1
]}

SINGH, VP ^{[1
]}

MORTON, DC ^{[1
]}

机构：

[1] USA,RES LAB,ELECTR & POWER SOURCES DIRECTORATE,FT MONMOUTH,NJ 07703

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.297730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10-degrees-K and 300-degrees-K and to a metal interrace device structure.

引用

页码：1357 / 1363

页数：7

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