DIFFUSION OF RH OVERLAYERS GROWN ON A PT(110) SURFACE

被引:30
作者
HE, YL [1 ]
ZUO, JK [1 ]
WANG, GC [1 ]
LOW, JJ [1 ]
机构
[1] ALLIED SIGNAL ENGINEERED MAT RES CTR INC,DES PLAINES,IL 60017
关键词
D O I
10.1016/0039-6028(91)90683-J
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics of Rh diffusion were investigated on an abrupt interface of Rh/Pt(110) which was artifically created by using molecular beam epitaxy evaporation of 0.5 or 1 monolayer Rh on a reconstructed Pt(110)(1 x 2) substrate. The kinetics of Rh overlayer diffusion were monitored by AES as a function of time and up-quenching temperature. The AES measurements were further compared with a phenomenological model for diffusion of overlayers into a bulk substrate. The barrier height of Rh diffusing into Pt has been determined to be 2.69 +/- 0.55 eV. Various equilibrium structural phases, c(2 x 2), (1 x 3) and (1 x 2), associated with certain Rh concentrations during diffusion were observed by using high-resolution LEED. In addition, excess surface segregation of Pt occurs at temperatures above 870 +/- 10 K, about 70 K higher than the onset temperature in a bulk Pt-Rh alloy.
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页码:269 / 279
页数:11
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