DIFFRACTION FROM SURFACES WITH RANDOMLY DISTRIBUTED STEPS

被引：151

作者：

LU, TM ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706

来源：

SURFACE SCIENCE | 1982年 / 120卷 / 01期

关键词：

D O I：

10.1016/0039-6028(82)90274-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：47 / 66

页数：20

相关论文

共 35 条

[1] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[2] LEED INVESTIGATION OF EXTENDED DEFECTS AT THE SURFACE OF GE FILMS GROWN EPITAXIALLY ON GAAS(110)
CLEARFIELD, HM
WELKIE, DG
LU, TM
LAGALLY, MG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 323 - 330
[3] ELECTRON-DIFFRACTION FROM A STATISTICALLY ROUGH SURFACE
COWLEY, JM
SHUMAN, H
[J]. SURFACE SCIENCE, 1973, 38 (01) : 53 - 59
[4] Flory P. J., 1953, PRINCIPLES POLYM CHE, P318
[5] LEED-INVESTIGATIONS AND WORK-FUNCTION MEASUREMENTS OF THE 1ST STAGES OF EPITAXY OF TUNGSTEN ON TUNGSTEN(110)
HAHN, P
CLABES, J
HENZLER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2079 - 2084
[6] HAYDEN HW, 1965, STRUCTURE PROPERTIES, V3, P98
[7] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES
HENZLER, M
CLABES, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396
[8] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122
[9] QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1978, 73 (01) : 240 - 251
[10] LEED STUDIES OF SURFACE IMPERFECTIONS
HENZLER, M
[J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 450 - 469

← 1 2 3 4 →