DEEP IMPURITIES IN SEMICONDUCTORS .2. THE OPTICAL-CROSS-SECTION

被引：77

作者：

INKSON, JC ^{[1
]}

机构：

[1] UNIV LUND,DEPT THEORET PHYS,SOLID STATE THEORY GRP,S-22101 LUND,SWEDEN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 07期

关键词：

D O I：

10.1088/0022-3719/14/7/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1093 / 1101

页数：9

共 12 条

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[7] DEEP IMPURITIES IN SEMICONDUCTORS .1. EVANESCENT STATES AND COMPLEX BAND-STRUCTURE [J].

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[8]

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[9] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

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[10]

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