ELECTRICAL STUDIES OF SINGLE-BARRIER HG1-XCDX TE HETEROSTRUCTURES

被引：5

作者：

CHOW, DH

MCCALDIN, JO

BONNEFOI, AR

MCGILL, TC

SOU, IK

FAURIE, JP

SHIRLAND, FA

WU, OK

机构：

[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575517

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2614 / 2618

页数：5

共 22 条

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[2]

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MCCALDIN, JO ;

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MCGILL, TC .

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[6] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE [J].

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[7]

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[8] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE [J].

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FAURIE, JP .

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[9] MAGNETO-OPTICAL INVESTIGATIONS OF A NOVEL SUPER-LATTICE - HGTE-CDTE [J].

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[10]

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