MODEL SELECTION FOR SOI MOSFET CIRCUIT SIMULATION

被引：3

作者：

FOSSUM, JG ^{[1
]}

VEERARAGHAVAN, S ^{[1
]}

FITZPATRICK, D ^{[1
]}

机构：

[1] HARRIS SEMICOND,MELBOURNE,FL 32901

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 04期

关键词：

D O I：

10.1109/43.3189

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：541 / 544

页数：4

共 13 条

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[2] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].

KATO, K ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :458-462

[3]

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[4]

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[5]

LIM HK, 1985, IEEE T ELECTRON DEV, V32, P446

[6]

LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[7]

LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[8] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J].

SANO, E ;

KASAI, R ;

OHWADA, K ;

ARIYOSHI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2043-2050

[9] SPICE SIMULATION OF SOI MOSFET INTEGRATED-CIRCUITS [J].

VEERARAGHAVAN, S ;

FOSSUM, JG ;

EISENSTADT, WR .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (04) :653-658

[10]

VEERARAGHAVAN S, 1987, OCT IEEE SOS SOI TEC

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