ELECTRON-TRANSPORT IN HETEROSTRUCTURE HOT-ELECTRON DIODES

被引：21

作者：

ARNOLD, D

HESS, K

IAFRATE, GJ

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：373 / 375

页数：3

共 19 条

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[4]

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[7] NEW ULTRAFAST SWITCHING MECHANISM IN SEMICONDUCTOR HETEROSTRUCTURES [J].

HESS, K ;

HIGMAN, TK ;

EMANUEL, MA ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3775-3777

[8] THEORETICAL AND EXPERIMENTAL-ANALYSIS OF THE SWITCHING MECHANISM IN HETEROSTRUCTURE HOT-ELECTRON DIODES [J].

HIGMAN, TK ;

HIGMAN, JM ;

EMANUEL, MA ;

HESS, K ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1495-1499

[9]

HIGMAN TK, COMMUNICATION

[10]

KANE EO, 1969, TUNNELING PHENOMENA, pCH1

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