COVERED ELECTRODE HGCDTE PHOTOCONDUCTOR UNDER HIGH ILLUMINATION LEVELS

被引:2
作者
FENIGSTEIN, A
SCHACHAM, SE
FINKMAN, E
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.586257
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The issue of thermal imaging systems exposed to large photon fluxes is of great practical importance, as it is encountered while observing a scenery which includes "hot" sources. High illumination level phenomena appear when excess carrier density is comparable or larger than majority carrier density in the bulk. This state can be reached quite easily in n-type HgCdTe detectors due to the moderate doping levels (typically less-than-or-equal-to 10(15) cm-3). A modified expression for the current responsivity is derived, suitable for use at both high and low illumination levels. The quasineutrality assumption is verified; thus the ambipolar equation can be applied to describe high illumination behavior. Photoconductive detectors with and without covered electrodes are measured and analyzed. It is shown that under high illumination levels (1) the dominating recombination mechanism is the phonon assisted Auger process, and (2) the relative photoresponse for a covered electrode structure decreases monotonously with increasing covered electrode length. This is in contrast to low illumination levels where an optimum responsivity is reached. Thus, covered electrode photoconductors provide benefits at both ends of the power spectrum.
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页码:1611 / 1616
页数:6
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