SEPARATION OF THE BULK AND SURFACE COMPONENTS OF RECOMBINATION LIFETIME OBTAINED WITH A SINGLE LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE

An algorithm for separating the bulk and surface components of recombination lifetime obtained via a contactless single laser excitation/microwave reflection decay measurement is presented. The surface recombination component of lifetime is determined by extrapolating the tail portion of the carrier decay curve to the carrier axis. Although the slope of this curve depends on both surface and bulk properties, it is shown that the y intercept depends only on the surface component of lifetime. A wide range of surface lifetimes, corresponding to surface recombination velocities from 10(2) to 10(5) cm/s, and bulk lifetimes from a few microseconds to several hundred microseconds can be measured. An experimental verification of the analysis is presented using microwave absorption/reflection measurements on silicon wafers representing a wide variety of bulk and surface lifetime components.