SILICON DIOXIDE AS DIELECTRIC IN SOLID ELECTROLYTE CAPACITORS

被引：5

作者：

HAAS, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 12期

关键词：

D O I：

10.1149/1.2425271

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1192 / 1195

页数：4

相关论文

共 7 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
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[2] CAPACITOR GRADE TANTALUM
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[3] ELECTRICAL CHARACTERISTICS OF ANODIZED NIOBIUM FOIL AND SINTERED PELLETS
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[4] ANODIC FORMATION OF OXIDE FILMS ON SILICON
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MICHEL, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 230 - 236
[5] PHYSICAL AND DIELECTRIC PROPERTIES OF THE METAL-SILICON DIOXIDE-SILICON SYSTEM
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WIED, OJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 94 - 98
[6] A METAL-SEMICONDUCTOR CAPACITOR
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) : 611 - 613
[7] ANODIC OXIDE FILMS ON NIOBIUM - THICKNESS, DIELECTRIC CONSTANT, DISPERSION, REFLECTION MINIMA, FORMATION FIELD STRENGTH, AND SURFACE AREA
YOUNG, L
[J]. CANADIAN JOURNAL OF CHEMISTRY, 1960, 38 (07) : 1141 - 1147