CHEMICAL BONDING OF W-SI COMPOUNDS

被引：6

作者：

AKIMOTO, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：49 / 51

页数：3

共 10 条

[1]

AKIMOTO K, 1981, APPL PHYS LETT, V39, P445

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FOWLER, WB .

PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858

[4]

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[6] ELECTRONIC STATES OF NI-SILICIDES AND ITS RELATION TO METAL-SILICIDE-SI INTERFACES [J].

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ITO, T ;

HIRAKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1542-1545

[7] BAND STRUCTURE OF SILICON FROM AN ADJUSTED HEINE-ABARENKOV CALCULATION [J].

KANE, EO .

PHYSICAL REVIEW, 1966, 146 (02) :558-+

[8] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

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[9]

TANAKA K, 1975, APPL PHYS LETT, V27, P527

[10]

Tu K. N., 1978, THIN FILMS INTERDIFF

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