QUASI-2-DIMENSIONAL ELECTRON-GAS AT SUBMONOLAYER COVERAGES OF CS ON INSB(110)

被引：14

作者：

BETTI, MG

BIAGI, R

DELPENNINO, U

MARIANI, C

机构：

[1] INFM, Dipartimento di Fisica, Università di Modena Via G, Campi 218ja, I-il 100, Modena

来源：

EUROPHYSICS LETTERS | 1995年 / 32卷 / 03期

关键词：

D O I：

10.1209/0295-5075/32/3/008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a complementary study of the space charge layer formation and band bending determination of caesium adsorption on InSb(110), by means of photoemission and high-resolution electron energy loss spectroscopy. At extremely low Cs coverage (below 0.01 monolayer), the Fermi level gets pinned into the InSb conduction band and an accumulation layer is formed. The quasi-two-dimensional (2D) behaviour of the accumulated carriers is experimentally deduced from the dispersion of the free-carrier plasmon. Eventually, further Cs deposition causes a reversed Fermi level pinning, with the formation of a depletion layer at saturation coverage.

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页码：235 / 240

页数：6

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