SPUTTERED THIN-FILMS OF PB1-XSNXTE FOR POTENTIAL INFRARED DETECTOR APPLICATIONS

被引：10

作者：

FAZIO, MV

WILSON, WL

机构：

[1] Department of Electrical Engineering, Rice University, Houston

来源：

INFRARED PHYSICS | 1979年 / 19卷 / 06期

关键词：

D O I：

10.1016/0020-0891(79)90001-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thin films of Pb1-xSnxTe were sputter deposited on amorphous substrates. Both their electrical as well as optical characteristics were studied. Deposition conditions which control the carrier type and density were identified. Carrier concentrations in the 1015 cm-3 range were achieved in unannealed films. D*BBS around 106 cm Hz 1 2 W-1 were observed in the photoconductive mode. © 1979.

引用

页码：609 / 615

页数：7