HYDROGEN NEUTRALIZATION OF DOPANT IN P-TYPE GA0.47IN0.53AS

被引：7

作者：

THEYS, B

JALIL, A

CHEVALLIER, J

HUBER, AM

GRATTEPAIN, C

HIRTZ, P

PAJOT, B

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

[2] UNIV PARIS 06,PHYS SOLIDE GRP,F-75251 PARIS 05,FRANCE

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90156-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Diffusion of hydrogen has been performed in a series of zinc doped GaInAs layers using a RF hydrogen plasma. In highly doped (almost-equal-to 10(19)/cm3) materials, the free hole concentration decrease is accompanied by a significant increase of the hole mobility indicating a neutralization process of acceptors. Layers doped at a level of almost-equal-to 10(18)/cm3 turn to n-type after hydrogenation. We also show that the hydrogen solubility in this material is fixed by the free hole density rather than by the hydrogen plasma conditions.

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页码：421 / 425

页数：5

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