CHARACTERIZATION OF REACTED OHMIC CONTACTS TO GAAS

被引：17

作者：

KATTELUS, HP ^{[1
]}

TANDON, JL ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Contacts;

D O I：

10.1016/0038-1101(86)90011-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

引用

页码：903 / 905

页数：3

共 11 条

[1]

Chu W. K., 1978, BACKSCATTERING SPECT

[2] INTERFACIAL REACTION AND SCHOTTKY-BARRIER BETWEEN PT AND GAAS [J].