SILICON ADSORPTION ON TUNGSTEN FIELD EMITTERS

被引：29

作者：

COLLINS, RA

机构：

来源：

SURFACE SCIENCE | 1971年 / 26卷 / 02期

关键词：

D O I：

10.1016/0039-6028(71)90020-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：624 / &

共 20 条

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].

ALLEN, FG ;

GOBELI, GW .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&

[2]

ALLEN FG, 1959, PHYSICS CHEMISTRY SO, V8, P119

[3] MULTILAYER ADSORPTION OF URANIUM ON TUNGSTEN [J].

COLLINS, RA ;

BLOTT, BH .

SURFACE SCIENCE, 1969, 13 (02) :401-&

[4] FIELD EMISSION THROUGH ATOMS ADSORBED ON A METAL SURFACE [J].

DUKE, CB ;

ALFERIEFF, ME .

JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (03) :923-+

[5] LOW-TEMPERATURE CHEMISORPTION .3. STUDIES IN FIELD EMISSION MICROSCOPE [J].

EHRLICH, G ;

HUDDA, FG .

JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (04) :1421-&

[6] PREPARATION OF EVAPORATED SILICON FILMS [J].

KILGORE, BF ;

ROBERTS, RW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01) :11-&

[7] INVESTIGATION OF THE SURFACE REACTION OF OXYGEN WITH CARBON ON TUNGSTEN WITH THE FIELD EMISSION MICROSCOPE [J].

KLEIN, R .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (07) :1177-1180

[8] NUCLEATION AND EPITAXIAL GROWTH OF CU ON W [J].

MELMED, AJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3585-&

[9]

MILESHKI.NV, 1966, FIZ TVERD TELA+, V8, P1110

[10]

MILESHKINA NV, 1964, SOV PHYS-SOL STATE, V5, P1826

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