学术探索
学术期刊
新闻热点
数据分析
智能评审

AN INSITU INFRARED STUDY OF THE ROOM-TEMPERATURE OXIDATION OF SILICON WITH ATOMIC AND MOLECULAR-OXYGEN

被引：13
作者：
CLAASSEN, WCM
SCHMITZ, RWAH
DIELEMAN, J
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90919-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：240 / 246
页数：7
相关论文
共 5 条
[1]   A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES [J].
BOYD, IW ;
WILSON, JIB .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4166-4172
[2]   AN INSITU INFRARED STUDY ON THE INTERACTION OF OXYGEN PLASMAS WITH SI AND FLUORINE PLASMAS WITH SIO2 SURFACES [J].
CLAASSEN, WCM ;
DIELEMAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1450-1452
[3]   INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
PAI, PG ;
CHAO, SS ;
TAKAGI, Y ;
LUCOVSKY, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :689-694
[4]   INITIAL-STAGES OF OXIDATION OF SI(100)(2X1) - A COMBINED VIBRATIONAL (EELS) AND ELECTRON-BINDING ENERGY (XPS) STUDY [J].
SCHAEFER, JA ;
GOPEL, W .
SURFACE SCIENCE, 1985, 155 (2-3) :535-552
[5]   XPS STUDY OF THE OXIDATION PROCESS OF SI(111) VIA PHOTOCHEMICAL DECOMPOSITION OF N2O BY AN UV EXCIMER LASER [J].
UNO, K ;
NAMIKI, A ;
ZAIMA, S ;
NAKAMURA, T ;
OHTAKE, N .
SURFACE SCIENCE, 1988, 193 (03) :321-335
1