AN ACCURATE VALUE FOR THE ABSORPTION-COEFFICIENT OF SILICON AT 633 NM

被引:14
作者
GEIST, J
SCHAEFER, AR
SONG, JF
WANG, YH
ZALEWSKI, EF
机构
[1] SCI APPLICAT INT CORP, DIV ELECTR VIS SYST, SAN DIEGO, CA 92121 USA
[2] CHANGCHENG INST METR & MEASUREMENT, SURFACE METROL GRP, BEIJING, PEOPLES R CHINA
[3] HUGHES DANBURG OPT SYST, DANBURY, CT 06810 USA
关键词
ABSORPTION COEFFICIENT; ETCH STOP; EXTINCTION COEFFICIENT; HENE; HIGH ACCURACY; SILICON;
D O I
10.6028/jres.095.043
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-mu-m thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105 +/- 62 cm-1 and 0.01564 +/- 0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.
引用
收藏
页码:549 / 558
页数:10
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