CARRIER REMOVAL AND DEFECT BEHAVIOR IN P-TYPE INP

被引：6

作者：

WEINBERG, I ^{[1
]}

SWARTZ, CK ^{[1
]}

DREVINSKY, PJ ^{[1
]}

机构：

[1] PHILLIPS LAB,DIV ELECTR & SOFTWARE,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.351946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

引用

页码：5509 / 5511

页数：3

共 10 条

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