MECHANISM FOR RADIATION-RESISTANCE OF INP SOLAR-CELLS

被引：116

作者：

YAMAGUCHI, M

ANDO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5555 / 5562

页数：8

共 28 条

[1]

ANDO K, 1986, PHYS REV B, V34, P3041, DOI 10.1103/PhysRevB.34.3041

[2]

ANDO K, 1985, 18TH P IEEE PHOT SPE, P770

[3]

ANDO K, 1986, APPL PHYS LETT, V47, P846

[4]

ANDO K, 1984, 1ST INT PHOT SCI ENG, P479

[5] RECOMBINATION ENHANCED DEFECT ANNEALING IN N-INP [J].

BENTON, JL ;

LEVINSON, M ;

MACRANDER, AT ;

TEMKIN, H ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :566-568

[6] ANTISITE DEFECTS IN IN1-YGAYAS1-XPX [J].

BUISSON, JP ;

ALLEN, RE ;

DOW, JD .

SOLID STATE COMMUNICATIONS, 1982, 43 (11) :833-836

[7] PHOTOLUMINESCENCE EFFICIENCY RECOVERY DUE TO ENHANCED ANNEALING OF RADIATION DEFECT IN P-TYPE INP BY PHOTOGENERATED CARRIER RECOMBINATION [J].

KAMADA, H ;

ANDO, K ;

YAMAGUCHI, M .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :913-915

[8] ELECTRON-PARAMAGNETIC RESONANCE IDENTIFICATION OF THE PHOSPHORUS ANTISITE IN ELECTRON-IRRADIATED INP [J].

KENNEDY, TA ;

WILSEY, ND .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1089-1091

[9]

Lang D. V., 1977, I PHYS C SER, V31, P70

[10] ELECTRON-BOMBARDMENT INDUCED DEFECT STATES IN P-INP [J].

LEVINSON, M ;

TEMKIN, H ;

BONNER, WA .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :423-432

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