PHOTOLUMINESCENCE EFFICIENCY RECOVERY DUE TO ENHANCED ANNEALING OF RADIATION DEFECT IN P-TYPE INP BY PHOTOGENERATED CARRIER RECOMBINATION

被引：4

作者：

KAMADA, H

ANDO, K

YAMAGUCHI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 14期

关键词：

D O I：

10.1063/1.96656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：913 / 915

页数：3

共 11 条

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[2]

ANDO K, 1984, 1ST INT PHOT SCI ENG, P479

[3]

HALL RN, 1950, PHYS REV, V87, P587

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[5]

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[8]

Sibille A., 1985, Thirteenth International Conference on Defects in Semiconductors, P1155

[9] RADIATION-DAMAGE IN INP SINGLE-CRYSTALS AND SOLAR-CELLS [J].

YAMAGUCHI, M ;

UEMURA, C ;

YAMAMOTO, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1429-1436

[10] CARRIER CONCENTRATION EFFECTS ON RADIATION-DAMAGE IN INP [J].

YAMAGUCHI, M ;

ANDO, K ;

UEMURA, C .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3160-3162

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