SYNTHESIS OF THIN COATINGS BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION USING METALLOORGANIC COMPOUNDS AS PRECURSORS

被引：24

作者：

RIE, KT

WOHLE, J

GEBAUER, A

机构：

[1] Institut für Oberflächentechnik und Plasmatechnische Werkstoffentwicklung, TU Braunschweig, W-3300 Braunschweig

来源：

SURFACE & COATINGS TECHNOLOGY | 1993年 / 59卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(93)90083-Z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The pulsed d.c. plasma-assisted chemical vapour deposition process using four metallo-organic compounds as precursors (MO-PACVD) was investigated. The compounds contain titanium or zirconium as metal to deposit Ti(C,N) or Zr(C,N) layers on steel substrates or hard metals. The influence of experimental parameters such as gas pressure, coating temperature and precursor evaporation temperature on the layer properties has been examined. For in-situ process control optical emission spectroscopy was used. It is shown that it is possible to decrease the coating temperature to 300-degrees-C and to deposit chlorine-free layers by MO-PACVD.

引用

页码：202 / 206

页数：5

共 7 条

[1]

KIKUCHI N, 1984, 9TH P INT C CHEM VAP, P728

[2]

KRUCK T, 1991, 10 P WORKSH ISPC BOC, P84

[3] EFFECT OF N2-TO-TICL4 FLOW-RATE RATIO ON THE PROPERTIES OF TIN COATINGS FORMED BY DC DISCHARGE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].

OGURI, K ;

FUJITA, H ;

ARAI, T .

THIN SOLID FILMS, 1991, 195 (1-2) :77-88

[4] SPECTROSCOPIC INVESTIGATION OF N2-H2-AR-TICL4-ASSISTED CHEMICAL VAPOR-DEPOSITION DISCHARGE FOR PLASMA OF TIN [J].

RIE, KT ;

WOHLE, J .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 :37-40

[5]

RIE KT, 1991, J PHYS IV, V1, P397

[6] INFLUENCE OF APPARATUS GEOMETRY AND DEPOSITION CONDITIONS ON STRUCTURE AND TOPOGRAPHY OF THICK SPUTTERED COATINGS [J].

THORNTON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04) :666-670

[7]

[No title captured]

← 1 →