METAL ELECTROMIGRATION DAMAGE HEALING UNDER BIDIRECTIONAL CURRENT STRESS

被引:35
作者
TAO, J
CHEUNG, NW
HU, CM
机构
[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA
关键词
D O I
10.1109/55.260787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ac electromigration lifetime, without dc component, has been studied in a wide frequency range (mHz to 200 MHz), and is found to be linearly proportional to the repetition frequency of the ac stressing current. This behavior is observed in both of the metalization systems (Al-2% Si and Cu) investigated. This provides further confirmation that ac lifetime is orders of magnitude longer than dc lifetime and CMOS signal lines may be called upon to carry much larger current than allowed in the present practice.
引用
收藏
页码:554 / 556
页数:3
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