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BROADENING OF THE BELOW-THRESHOLD NEAR-FIELD PROFILE OF GAAS QUANTUM-WELL LASERS DUE TO PHOTON RECYCLING

被引：3
作者：
GAVRILOVIC, P
WOBER, M
MEEHAN, K
ONEILL, MS
机构：
[1] Polaroid Corporation, Microdevice Laboratory, 21 Osborn Street, Cambridge
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 04期
关键词：
D O I：
10.1109/3.371934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The subthreshold near-field profile of single quantum well laser diodes was studied experimentally and theoretically. Wide gain-guided stripes as well as single lateral mode ridge-waveguide diodes were investigated. In both types of device, the measured width of the near-field was significantly wider than the width predicted by the conventional theory which includes ambipolar carrier diffusion as the only spatial broadening mechanism. A new model that invokes close to 100% efficient photon recycling was developed to explain the observed near-field profiles.
引用
收藏
页码：623 / 626
页数：4
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