PHONON INTERACTIONS AT THE DEEP PLATINUM ACCEPTOR IN SILICON

被引：22

作者：

KLEVERMAN, M

OLAJOS, J

GRIMMEISS, HG

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.37.2613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2613 / 2617

页数：5

共 18 条

[1] EFFECTIVE MASS-LIKE STATES OF THE DEEP ACCEPTOR LEVEL OF AU AND PT IN SILICON [J].

ARMELLES, G ;

BARRAU, J ;

BROUSSEAU, M ;

PAJOT, B ;

NAUD, C .

SOLID STATE COMMUNICATIONS, 1985, 56 (03) :303-305

[2]

BALDERESCHI A, 1976, PHYSICS SEMICONDUCTO, P595

[3] THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS [J].

HEINE, V ;

HENRY, CH .

PHYSICAL REVIEW B, 1975, 11 (10) :3795-3803

[4] SHARP LINE PHOTOCONDUCTIVITY IN SI-S [J].

HUMPHREYS, RG ;

MIGLIORATO, P ;

FORTUNATO, G .

SOLID STATE COMMUNICATIONS, 1981, 40 (08) :819-823

[5] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[6] FANO RESONANCES IN CHALCOGEN-DOPED SILICON [J].

JANZEN, E ;

GROSSMANN, G ;

STEDMAN, R ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1985, 31 (12) :8000-8012

[7] OBSERVATION OF P1/2 RESONANT STATES AND FANO RESONANCES OF THE DEEP GOLD ACCEPTOR IN SILICON [J].

KLEVERMAN, M ;

OLAJOS, J ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1987, 35 (08) :4093-4094

[8]

MENDELSON KS, 1969, PHYS STATUS SOLIDI B, V11, P59

[9]

OMLING P, COMMUNICATION

[10] ANOMALOUS WIDTH OF SOME PHOTOEXCITATION LINES OF IMPURITIES IN SILICON [J].

ONTON, A ;

FISHER, P ;

RAMDAS, AK .

PHYSICAL REVIEW LETTERS, 1967, 19 (14) :781-&

← 1 2 →