CHANNELING IN SI OVERLAID WITH AL AND AU FILMS

被引:20
作者
RIMINI, E
LUGUJJO, E
MAYER, JW
机构
来源
PHYSICAL REVIEW B | 1972年 / 6卷 / 03期
关键词
D O I
10.1103/PhysRevB.6.718
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:718 / &
相关论文
共 23 条
[1]   MULTIPLE SCATTERING OF HEAVY IONS OF KEV ENERGIES TRANSMITTED THROUGH THIN CARBON FILMS [J].
ANDERSEN, HH ;
BOTTIGER, J .
PHYSICAL REVIEW B, 1971, 4 (07) :2105-&
[2]  
BERNHARD F, 1970, ATOMIC COLLISION PHE, P633
[3]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[4]   CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J].
DAVIES, JA ;
DENHARTOG, J ;
WHITTON, JL .
PHYSICAL REVIEW, 1968, 165 (02) :345-+
[5]   DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].
FELDMAN, LC ;
RODGERS, JW .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3776-&
[6]   TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J].
FOTI, G ;
GRASSO, F ;
QUATTROCCHI, R ;
RIMINI, E .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07) :2169-+
[7]  
GRASSO F, UNPUBLISHED
[8]  
Hart R. R., 1970, Radiation Effects, V6, P51, DOI 10.1080/00337577008235045
[9]   ZUR EINFACHSTREUUNG UND MEHRFACHSTREUUNG GELADENER TEILCHEN [J].
KEIL, E ;
ZEITLER, E ;
ZINN, W .
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (12) :1031-1038
[10]  
LINDARD J, 1968, NATL KGL DANSKE VIDE, V38, P10