INTERNAL FRICTION IN GERMANIUM AND SILICON .1. ELECTRON AND IMPURITY RELAXATION

被引：36

作者：

SOUTHGATE, PD

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1960年 / 76卷 / 489期

关键词：

D O I：

10.1088/0370-1328/76/3/309

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：385 / 397

页数：13

共 28 条

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