INTERNAL FRICTION IN GERMANIUM AND SILICON .1. ELECTRON AND IMPURITY RELAXATION

被引:36
作者
SOUTHGATE, PD
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1960年 / 76卷 / 489期
关键词
D O I
10.1088/0370-1328/76/3/309
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:385 / 397
页数:13
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