共 15 条
- [1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
- [3] HYDROGENATION OF P-TYPE GALLIUM NITRIDE [J]. APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2264 - 2266
- [4] P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 932 - 933
- [7] Moustakas T. D., 1993, Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, P753
- [8] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1258 - 1266
- [9] GAN GROWTH USING GAN BUFFER LAYER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1705 - L1707
- [10] Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3