GAN/GAINN/GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FABRICATED USING PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引:47
作者
SAKAI, H [1 ]
KOIDE, T [1 ]
SUZUKI, H [1 ]
YAMAGUCHI, M [1 ]
YAMASAKI, S [1 ]
KOIKE, M [1 ]
AMANO, H [1 ]
AKASAKI, I [1 ]
机构
[1] TOYODA GOSEI CO LTD, HARUHI, AICHI 452, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期
关键词
GAN; GAINN; RF-MBE; DOUBLE HETEROSTRUCTURE; VIOLET LED;
D O I
10.1143/JJAP.34.L1429
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-quality GaN and Ga1-xInxN (x less than or equal to 0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalorganic vapor-phase epitaxy for the first time. GaN and GaInN showed intense near-band-edge photoluminescence (PL) at room temperature. A double heterostructure (DH) of p-GaN:Mg/Ga0.8In0.2N/n-GaN has been fabricated. The DH light emitting diode showed intense violet emission upon current injection at room temperature.
引用
收藏
页码:L1429 / L1431
页数:3
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