EPITAXIAL-GROWTH OF ZRN ON SI(100)

被引:40
作者
BARNETT, SA
HULTMAN, L
SUNDGREN, JE
RONIN, F
ROHDE, S
机构
[1] NORTHWESTERN UNIV,DEPT MAT SCI,EVANSTON,IL 60201
[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
[3] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
关键词
D O I
10.1063/1.99891
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:400 / 402
页数:3
相关论文
共 26 条
[11]   GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].
JOHANSSON, BO ;
SUNDGREN, JE ;
GREENE, JE ;
ROCKETT, A ;
BARNETT, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :303-307
[12]  
LEE JW, 1987, I PHYS C SER, V83, P111
[13]  
Milnes AG, 1972, HETEROJUNCTIONS META
[14]   SIMULTANEOUS RHEED-AES-QMS STUDY ON EPITAXIAL SI FILM GROWTH ON SI(111) AND SAPPHIRE (-1102) SURFACES BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].
NARUSAWA, T ;
SHIMIZU, S ;
KOMIYA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :366-368
[15]  
Oshcherin B. N., 1984, Physics, Chemistry and Mechanics of Surfaces, V2, P1451
[16]  
SCHOWALTER LJ, 1988, 2ND P INT S SI MBE, P140
[17]   EFFECTS OF GA AND SI IONIZATION ON THE GROWTH OF GA DOPED SI MBE [J].
SHIMIZU, S ;
KOMIYA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :765-768
[18]   INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES [J].
SULLIVAN, PW ;
FARROW, RFC ;
JONES, GR .
JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :403-413
[19]  
SUNDGREN JE, 1986, PHYSICS CHEM PROTECT, P95
[20]  
Toth L.E, 1971, TRANSITION METAL CAR