RADIATION-DAMAGE STUDY OF BIPOLAR-DEVICES IN X-RAY-LITHOGRAPHY

被引:8
作者
HSIA, LC
MAGDO, I
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584478
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1667 / 1670
页数:4
相关论文
共 13 条
[1]  
DEAL BE, 1974, J ELECTROCHEM SOC, V121, P198
[2]  
JESPERS P, 1977, PROCESS DEVICE MODEL
[3]  
LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171
[4]   X-RAY-DAMAGE CONSIDERATIONS IN MOSFET DEVICES [J].
MALDONADO, JR ;
REISMAN, A ;
LEZEC, H ;
WILLIAMS, CK ;
IYER, SS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :628-631
[5]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[6]  
PONTDEXTER E, 1984, J APPL PHYS, V56, P2844
[7]  
Silverman J. P., 1989, Microelectronic Engineering, V9, P101, DOI 10.1016/0167-9317(89)90023-3
[8]  
SILVERMAN JP, 1983, P SOC PHOTO-OPT INST, V393, P99, DOI 10.1117/12.935100
[9]   FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION [J].
SILVERMAN, JP ;
DIMILIA, V ;
KATCOFF, D ;
KWIETNIAK, K ;
SEEGER, D ;
WANG, LK ;
WARLAUMONT, JM ;
WILSON, AD ;
CROCKATT, D ;
DEVENUTO, R ;
HILL, B ;
HSIA, LC ;
RIPPSTEIN, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2147-2152
[10]   EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].
SNOW, EH ;
GROVE, AS ;
FITZGERALD, DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+